wnmd21 62 dual n - channel, 20 v , 4.8 a, power mosfet descriptions the wnmd 2162 is dual n - channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) w ith low gate charge . this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product wnmd 2162 is pb - free and halogen - free . features ? trench technology ? supper h igh density cell design ? e xcellent on resistance for higher dc current ? extremely low threshold voltage ? small package applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging pin c onfiguration (top view) 2162 = device code yy = year ww = week marking order i nformation d2 8 d2 7 d1 6 1 s2 2 g2 d1 5 4 g1 3 s1 2162 yyww 4 2 3 1 5 6 7 8 pdfn 2.9 2.8 - 8l device package shipping wnmd 2162 - 8 /tr pdfn 2 .9 2.8 - 8l 3000 /reel&tape pdfn 2.9 2.8 - 8l v ds (v) rds(on) ( ) 20 0.0 16 @ v gs =4.5v 0.0 19 @ v gs = 3.1 v 0.0 22 @ v gs = 2.5 v esd protected 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance ratings a surface mounted on fr - 4 board using 1 square inch pad size, 1oz copper ;. b surface mounted on fr - 4 board using minimum pad size, 1oz copper ;. c pulse width<38 0s, duty cycle <2 % ;. d maximum junction temperature t j =1 50 c ; . e c urrent rating is limited by wire - bonding. parameter symbol 10 s steady state unit drain - source voltage v ds 20 v gate - source voltage v gs 10 continuous drain current a.e t a =25c i d 4.8 4.8 a t a =70c 4.8 4.8 maximum power dissipation a. t a =25c p d 1.7 1.0 w t a =70c 1.1 0.6 continuous drain current b .e t a =25c i d 4.8 4.8 a t a =70c 4.8 3.7 maximum power dissipation b t a =25c p d 1.6 0.9 w t a =70c 1.0 0.5 pulsed drain current c i dm 40 a operating junction temperature t j - 55~ + 150 c lead temperature t l 260 c storage temperature range t stg - 55 to 150 c single operation parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 61 72 c/w steady state 102 128 junction - to - ambient thermal resistance b t 10 s r ja 6 5 75 steady state 1 20 1 48 junction - to - case thermal resistance steady state r jc 54 63 wnmd21 62 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c , unless other wise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = 250 u a 20 v zero gate voltage drain current i dss v ds =1 6 v, v gs = 0v 1 u a gate - t o - s ource leakage curren t i gss v ds = 0 v, v gs = 10 v 5 u a on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 2 5 0u a 0. 4 0. 7 1.0 v drain - t o - s ource on - r esistance r ds(on) v gs = 4 . 5 v , i d = 4.8 a 1 6 22 m? v gs = 3.1 v , i d = 4.0 a 1 9 28 v gs = 2.5 v , i d = 3.0 a 2 2 3 4 forward transconductance g fs v ds = 5 .0 v, i d = 4.8 a 17 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 1 0 v 1371 pf output capacitance c oss 185 reverse transfer capacitance c rss 172 t otal gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 4.8 a 18. 9 nc threshold gate charge q g(th) 1 . 3 gate - to - source charge q gs 2.8 gate - to - drain charge q gd 6. 4 switching characteristics turn - on delay time td(on) v gs = 4.5 v, v ds = 6 v, i d = 4.8 a , r g =6 ? 29 ns rise time tr 35 turn - off delay time td(off) 260 fall time tf 1 25 body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.0 a 0.6 5 1.5 v wnmd21 62 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. gate - to - source voltage threshold voltage vs. temperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20 t=25 o c t=125 o c i ds -drain to source current (a) v gs -gate to source voltage(v) t=-50 o c -50 0 50 100 150 0.4 0.8 1.2 1.6 2.0 v gs =4.5v i d =4.8a normalized r ds(on) -on-resistance temperature( o c) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.00 0.02 0.04 0.06 0.08 0.10 i d =4.8a r ds(on) - on-resistance (m ? ) v gs -gate-to-source voltage(v) 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 v gs =4v, v gs =4.5v v gs =2.5v v gs =1.8v v gs =2v i ds -drain to source current(a) v ds -drain to source voltage(v) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 v gs(th) -gate thershold voltage (v) temperature ( o c) i d =250ua 0 5 10 15 20 0 20 40 60 80 v gs =4.5v v gs =2.5v r ds(on) -on resistance(m ? ) i ds -drain-to-source current(a) v gs =1.8v wnmd21 62 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20 t=25 o c t=125 o c i ds -drain to source current (a) v gs -gate to source voltage(v) t=-50 o c 0 5 10 15 20 5 10 15 20 25 30 35 v gs =4.5v v gs =2.5v r ds(on) -on resistance(m : ) i ds -drain-to-source current(a) v gs =1.8v -50 0 50 100 150 10 12 14 16 18 20 22 v gs =4.5v i d =4.6a r ds(on) -on-resistance(m : ) temperature( o c) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.00 0.02 0.04 0.06 0.08 0.10 i d =4.8a r ds(on) - on-resistance (m : ) v gs -gate-to-source voltage(v) 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 v gs =4v, v gs =4.5v v gs =2.5v v gs =1.8v v gs =2v i ds -drain to source current(a) v ds -drain to source voltage(v) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 v gs(th) -gate thershold voltage (v) temperature ( o c) i d =250ua
capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics 0 2 4 6 8 10 0 500 1000 1500 2000 2500 c rss c oss v ds -drain to source voltage(v c-capacitance(pf) v gs =0v f=1mhz c iss 0.1 1 10 100 0.01 0.1 1 10 100 b vdss limited t a =25 o c single pulse dc 10s 1s 100ms 10ms 1ms 100us limited by r ds (on)* v ds -drian-to-source votage(v) * v gs > minimum v gs at which r ds(on) is specified i d -drian current(a) 1e-4 1e-3 0.01 0.1 1 10 100 20 40 60 80 100 t a =25 o c time(s) power (w) 0 5 10 15 20 0 1 2 3 4 v gs =4.5v, v ds =10v, i d =4.8a v gs gate to source voltage (v) qg(nc) 0.0 0.3 0.6 0.9 1.2 1.5 5 10 15 20 t=25 o c i sd -source to drain current (a) v sd - source to drain voltage (v) t=150 o c wnmd21 62 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 2 4 6 8 10 0 500 1000 1500 2000 2500 c rss c oss v ds -drain to source voltage(v c-capacitance(pf) v gs =0v f=1mhz c iss 0.1 1 10 100 0.01 0.1 1 10 100 b vdss limited t a =25 o c single pulse dc 10s 1s 100ms 10ms 1ms 100us limited by r ds (on)* v ds -drian-to-source votage(v) * v gs > minimum v gs at which r ds(on) is specified i d -drian current(a) 1e-4 1e-3 0.01 0.1 1 10 100 20 40 60 80 100 t a =25 o c time(s) power (w) 0 5 10 15 20 0 1 2 3 4 v gs =4.5v, v ds =10v, i d =4.8a v gs gate to source voltage (v) qg(nc) 0.0 0.3 0.6 0.9 1.2 1.5 5 10 15 20 t=25 o c i sd -source to drain current (a) v sd - source to drain voltage (v) t=150 o c
transient thermal response (junction - to - ambient) 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.01 0.1 1 0.02 single pulse 0.05 0.1 0.2 duty cycle=0.5 square wave pulse duration (s) normalized effective transient thermal impedance p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 102 c/w 3. t jm - t a = p dm r ja 4. surface mounted wnmd21 62 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.01 0.1 1 0.02 single pulse 0.05 0.1 0.2 duty cycle=0.5 square wave pulse duration (s) normalized effective transient thermal impedance
package outline dimensions symbol dimensions in millimeter min. typ. max. a 0.700 0.800 0.900 a1 0.000 0.050 b 0. 24 0 0. 3 00 0. 350 c 0. 08 0 0.15 2 0.2 5 0 d 2.90 bs c e 2.8 0 bsc e1 2.3 0 bsc e 0.65 bsc l 0.200 0.375 0.450 l 1 0 0.100 1 0 1 0 12 pdfn 2.9 * 2.8 - 8l wnmd21 62 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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